<?xml version="1.0" encoding="utf-8"?>
<!DOCTYPE eagle SYSTEM "eagle.dtd">
<eagle version="7.2.0">
<drawing>
<library>
<description>&lt;b&gt;Field Effect Transistors&lt;/b&gt;&lt;p&gt;
&lt;author&gt;Created by librarian@cadsoft.de&lt;/author&gt;&lt;p&gt;
&lt;p&gt;
Symbols changed according to IEC617&lt;p&gt; 
All types, packages and assignment to symbols and pins checked&lt;p&gt;
Package outlines partly checked&lt;p&gt;
&lt;p&gt;
JFET = junction FET&lt;p&gt;
IGBT-x = insulated gate bipolar transistor&lt;p&gt;
x=N: NPN; x=P: PNP&lt;p&gt;
IGFET-mc-nnn; (IGFET=insulated gate field effect transistor)&lt;P&gt;
m=D: depletion mode (Verdr&amp;auml;ngungstyp)&lt;p&gt;
m=E: enhancement mode (Anreicherungstyp)&lt;p&gt;
c: N=N-channel; P=P-Channel&lt;p&gt;
nnn=GDS:  gate, drain, source&lt;p&gt;
2GDS: 2 x gate, drain, source&lt;p&gt;
GnDS: gate, n x drain, source&lt;p&gt;
GDSB: gate, drain, source, bulk&lt;p&gt;
&lt;p&gt;
by R. Vogg  15.March.2002</description>
<packages>
<package name="TO92/">
<description>&lt;b&gt;&lt;/b&gt;</description>
</package>
<package name="TO92-">
<description>&lt;b&gt;&lt;/b&gt;</description>
</package>
<package name="TO92L">
<description>&lt;b&gt;&lt;/b&gt;</description>
</package>
<package name="TO3">
<description>&lt;b&gt;TO 3&lt;/b&gt;</description>
</package>
<package name="TO3A">
<description>&lt;b&gt;&lt;/b&gt;</description>
</package>
<package name="TO3/">
<description>&lt;b&gt;TO 3; 45 degree&lt;/b&gt;</description>
</package>
<package name="TO3/A">
<description>&lt;b&gt;&lt;/b&gt;</description>
</package>
<package name="TO72">
<description>&lt;b&gt;&lt;/b&gt;</description>
</package>
<package name="TO202">
<description>&lt;b&gt;&lt;/b&gt;</description>
</package>
<package name="TO18-">
<description>&lt;b&gt;&lt;/b&gt;</description>
</package>
<package name="TO18">
<description>&lt;b&gt;&lt;/b&gt;</description>
</package>
<package name="TO218">
<description>&lt;b&gt;&lt;/b&gt;</description>
</package>
<package name="TO220">
<description>&lt;b&gt;&lt;/b&gt;</description>
</package>
<package name="TO218V">
<description>&lt;b&gt;&lt;/b&gt;</description>
</package>
<package name="TOP3">
<description>&lt;b&gt;&lt;/b&gt;</description>
</package>
<package name="TOP3V">
<description>&lt;b&gt;&lt;/b&gt;</description>
</package>
<package name="TO5">
<description>&lt;b&gt;&lt;/b&gt;</description>
</package>
<package name="TO126">
<description>&lt;b&gt;&lt;/b&gt;</description>
</package>
<package name="TO66/">
<description>&lt;b&gt;&lt;/b&gt;</description>
</package>
<package name="TO66">
<description>&lt;b&gt;&lt;/b&gt;</description>
</package>
<package name="TO202V">
<description>&lt;b&gt;&lt;/b&gt;</description>
</package>
<package name="TO126V">
<description>&lt;b&gt;&lt;/b&gt;</description>
</package>
<package name="TO-39">
<description>&lt;b&gt;TP 39&lt;/b&gt;</description>
</package>
<package name="TO-52">
<description>&lt;b&gt;TO 52&lt;/b&gt;</description>
</package>
<package name="TO237">
<description>&lt;b&gt;&lt;/b&gt;</description>
</package>
<package name="P-TO247">
<description>&lt;b&gt;Plastic Transistor Single Outline&lt;/b&gt;</description>
</package>
<package name="TO220-3-45">
<description>D2PAK</description>
</package>
<package name="TO92">
<description>&lt;b&gt;&lt;/b&gt;</description>
</package>
<package name="TO-92">
<description>&lt;b&gt;&lt;/b&gt;</description>
</package>
<package name="TO262-H">
<description>&lt;b&gt;Molded Package&lt;/b&gt;</description>
</package>
<package name="SOT89-4">
<description>&lt;b&gt;SOT-89&lt;/b&gt;</description>
</package>
<package name="D2PAK">
<description>&lt;b&gt;SMD D2PAK&lt;/b&gt;</description>
</package>
<package name="POWERPAK-SO-08">
<description>&lt;b&gt;PowerPAK SO-8&lt;/b&gt;&lt;p&gt;</description>
</package>
<package name="SSOT-6">
<description>&lt;b&gt;Small Outline Transistor&lt;/b&gt;</description>
</package>
<package name="SOT89">
<description>&lt;b&gt;SOT-89&lt;/b&gt;</description>
</package>
<package name="POWERPAK-1212-8">
<description>POWER-PAK 1212-8</description>
</package>
<package name="POWERPAK-SO-08-DUAL">
</package>
<package name="DPAK">
<description>&lt;b&gt;SMD D-PAK&lt;/b&gt;</description>
</package>
<package name="TO71">
<description>&lt;b&gt;Metal Can Package&lt;/b&gt;</description>
</package>
<package name="TO220-RM">
<description>&lt;b&gt;TO-220&lt;/b&gt;&lt;p&gt; 
Rivet Mount, No Restrict, Drill 0.125</description>
</package>
<package name="DPAK-3">
<description>DPAK-3 / IPAK</description>
</package>
<package name="SOT23">
<description>&lt;b&gt;SMALL OUTLINE TRANSISTOR&lt;/b&gt;&lt;p&gt;
reflow soldering</description>
</package>
<package name="SOT223">
<description>&lt;b&gt;SOT-223&lt;/b&gt;</description>
</package>
<package name="TO220V">
<description>&lt;b&gt;&lt;/b&gt;</description>
</package>
<package name="DIL04">
<description>&lt;b&gt;Dual In Line Package&lt;/b&gt;</description>
</package>
<package name="IPAK">
<description>IPAK - Fairchild</description>
</package>
<package name="IPAKV">
<description>IPAK vertical - Fairchild</description>
</package>
<package name="SSOT-3">
<description>SuperSOT-3</description>
</package>
<package name="SC70">
<description>&lt;b&gt;SC70-3 Reflow soldering&lt;/b&gt;&lt;p&gt;
Philips SC01_Mounting_1996.pdf&lt;p&gt;
ROHM : UMT3 ; EIAJ : SC-70</description>
</package>
<package name="PLD-15">
<description>CASE 466-03, STYLE 1&lt;p&gt;
PLD-1.5</description>
</package>
<package name="SO08">
<description>&lt;b&gt;SMALL OUTLINE INTEGRATED CIRCUIT&lt;/b&gt;&lt;p&gt;
body 3.9 mm/JEDEC MS-012AA</description>
</package>
<package name="SC70-6L">
<description>&lt;b&gt;SC-70 Package&lt;/b&gt;</description>
</package>
<package name="SC70-5L">
<description>&lt;b&gt;SC-70 Package&lt;/b&gt;</description>
</package>
<package name="SO08-E3">
<description>&lt;b&gt;SMALL OUTLINE INTEGRATED CIRCUIT&lt;/b&gt;&lt;p&gt;
body 3.9 mm/JEDEC MS-012AA&lt;p&gt;
(combined pins variation)</description>
</package>
<package name="POWER56">
<description>Power56</description>
</package>
<package name="TO-3PN_V">
<description>&lt;b&gt;TO-3PN&lt;/b&gt; - Vertical&lt;p&gt;
Fairchild</description>
</package>
<package name="TSOP6-4D">
<description>TSOP6&lt;p&gt;
Alpha &amp; Omega Semiconductor</description>
</package>
<package name="LFPAK">
<description>lead pitch 1.25mm, Renesas</description>
</package>
<package name="LFPAK-S3">
<description>&lt;b&gt;LFPAK&lt;/b&gt;&lt;p&gt;
lead pitch 1.25mm, Renesas</description>
</package>
<package name="PSOP8-GR">
<description>&lt;b&gt;Power SOP8&lt;/b&gt;&lt;p&gt;
4.40mm body width</description>
</package>
<package name="SOT323-R">
<description>&lt;b&gt;SOT323 Reflow soldering&lt;/b&gt;&lt;p&gt;
Philips SC01_Mounting_1996.pdf</description>
</package>
<package name="PG-TDSON-8(3X3)">
<description>&lt;b&gt;PG-TDSON-8&lt;/b&gt;&lt;p&gt;
body 3 x 3 mm</description>
</package>
<package name="PG-TDSON-8(6X5)">
<description>&lt;b&gt;PG-TDSON-8&lt;/b&gt;&lt;p&gt;
body 6 mm x 5 mm</description>
</package>
<package name="SOT457">
<description>SOT457 (TSOP6)&lt;p&gt;
pitch 0.95 mm</description>
</package>
<package name="E3LINE">
<description>&lt;b&gt;3 lead Package&lt;/b&gt;</description>
</package>
<package name="SOT563">
<description>SOT-563&lt;p&gt;
DRL (R-PDSO-N6)</description>
</package>
<package name="SON8-Q5A">
<description>&lt;b&gt;8-SON&lt;/b&gt; (Q5A)&lt;p&gt;
body 5 x 6 mm</description>
</package>
<package name="SON8-Q3">
<description>&lt;b&gt;8-SON&lt;/b&gt; (Q3)&lt;p&gt;
body 3.3 x 3.3 mm</description>
</package>
<package name="SOT723">
<description>SOT723 (VMT3)</description>
</package>
<package name="POWERPAK-SO-08D">
<description>&lt;b&gt;PowerPAK-SO-8 DUAL&lt;/b&gt;</description>
</package>
<package name="POWERPAK-1212-8D">
<description>PowerPAK 1212-8 Dual</description>
</package>
</packages>
<symbols>
<symbol name="JFET-N">
<pin name="G" direction="pas"/>
<pin name="D" direction="pas"/>
<pin name="S" direction="pas"/>
</symbol>
<symbol name="JFET-P">
<pin name="G" direction="pas"/>
<pin name="S" direction="pas"/>
<pin name="D" direction="pas"/>
</symbol>
<symbol name="IGFET-DP-GDSB">
<pin name="G" direction="pas"/>
<pin name="D" direction="pas"/>
<pin name="S" direction="pas"/>
<pin name="B" direction="pas"/>
</symbol>
<symbol name="IGFET-EN-GDS">
<pin name="D" direction="pas"/>
<pin name="S" direction="pas"/>
<pin name="G" direction="pas"/>
</symbol>
<symbol name="IGFET-DN-2GDS">
<pin name="G2" direction="pas"/>
<pin name="G1" direction="pas"/>
<pin name="D" direction="pas"/>
<pin name="S" direction="pas"/>
</symbol>
<symbol name="IGFET-EP-GDS">
<pin name="D" direction="pas"/>
<pin name="S" direction="pas"/>
<pin name="G" direction="pas"/>
</symbol>
<symbol name="IGBT-N">
<pin name="G" direction="pas"/>
<pin name="E" direction="pas"/>
<pin name="C" direction="pas"/>
</symbol>
<symbol name="IGFET-DP-G2DS">
<pin name="G" direction="pas"/>
<pin name="D" direction="pas"/>
<pin name="S" direction="pas"/>
<pin name="D1" direction="pas"/>
</symbol>
<symbol name="IGFET-EN-G2DS">
<pin name="D" direction="pas"/>
<pin name="S" direction="pas"/>
<pin name="G" direction="pas"/>
<pin name="D1" direction="pas"/>
</symbol>
<symbol name="IGFET-EP-G2DS">
<pin name="D" direction="pas"/>
<pin name="S" direction="pas"/>
<pin name="G" direction="pas"/>
<pin name="D1" direction="pas"/>
</symbol>
<symbol name="IGFET-DN-GDSB">
<pin name="D" direction="pas"/>
<pin name="S" direction="pas"/>
<pin name="G" direction="pas"/>
<pin name="B" direction="pas"/>
</symbol>
<symbol name="IGFET-EN-G4DS">
<pin name="D1" direction="pas"/>
<pin name="S" direction="pas"/>
<pin name="D2" direction="pas"/>
<pin name="D3" direction="pas"/>
<pin name="D4" direction="pas"/>
<pin name="G" direction="pas"/>
</symbol>
<symbol name="IGFET-DN-GDS">
<pin name="D" direction="pas"/>
<pin name="S" direction="pas"/>
<pin name="G" direction="pas"/>
</symbol>
<symbol name="IGFET-DP-GDS">
<pin name="G" direction="pas"/>
<pin name="D" direction="pas"/>
<pin name="S" direction="pas"/>
</symbol>
<symbol name="IGFET-EN-GDSB">
<pin name="D" direction="pas"/>
<pin name="S" direction="pas"/>
<pin name="G" direction="pas"/>
<pin name="B" direction="pas"/>
</symbol>
<symbol name="IGFET-EP-GDSB">
<pin name="D" direction="pas"/>
<pin name="S" direction="pas"/>
<pin name="G" direction="pas"/>
<pin name="B" direction="pas"/>
</symbol>
<symbol name="IGBT-P">
<pin name="G" direction="pas"/>
<pin name="E" direction="pas"/>
<pin name="C" direction="pas"/>
</symbol>
<symbol name="IGFET-EN-G4D3S">
<pin name="D1" direction="pas"/>
<pin name="S1" direction="pas"/>
<pin name="D2" direction="pas"/>
<pin name="D3" direction="pas"/>
<pin name="D4" direction="pas"/>
<pin name="G" direction="pas"/>
<pin name="S2" direction="pas"/>
<pin name="S3" direction="pas"/>
</symbol>
<symbol name="BTS117">
<pin name="IN" direction="pas"/>
<pin name="D" direction="pas"/>
<pin name="S" direction="pas"/>
</symbol>
<symbol name="EMOS-N">
<pin name="D" direction="pas"/>
<pin name="S" direction="pas"/>
<pin name="G" direction="pas"/>
</symbol>
<symbol name="MFNS">
<pin name="G" direction="pas"/>
<pin name="D" direction="pas"/>
<pin name="S" direction="pas"/>
</symbol>
<symbol name="EMOS_ND2">
<pin name="D" direction="pas"/>
<pin name="S" direction="pas"/>
<pin name="G" direction="pas"/>
<pin name="D2" direction="pas"/>
</symbol>
<symbol name="MFNS-D4S3">
<pin name="D1" direction="pas"/>
<pin name="D2" direction="pas"/>
<pin name="D3" direction="pas"/>
<pin name="D4" direction="pas"/>
<pin name="G" direction="pas"/>
<pin name="S1" direction="pas"/>
<pin name="S2" direction="pas"/>
<pin name="S3" direction="pas"/>
</symbol>
<symbol name="MFNS-D2">
<pin name="D1" direction="pas"/>
<pin name="D2" direction="pas"/>
<pin name="G" direction="pas"/>
<pin name="S" direction="pas"/>
</symbol>
<symbol name="MFPS">
<pin name="G" direction="pas"/>
<pin name="D" direction="pas"/>
<pin name="S" direction="pas"/>
</symbol>
<symbol name="IGFET-EN-GD3S">
<pin name="D" direction="pas"/>
<pin name="S1" direction="pas"/>
<pin name="G" direction="pas"/>
<pin name="S2" direction="pas"/>
<pin name="S3" direction="pas"/>
</symbol>
<symbol name="MFNS-DUAL">
<pin name="G1" direction="pas"/>
<pin name="D1" direction="pas"/>
<pin name="S1" direction="pas"/>
<pin name="G2" direction="pas"/>
<pin name="D2" direction="pas"/>
<pin name="S2" direction="pas"/>
</symbol>
<symbol name="DMOS-ND2">
<pin name="D" direction="pas"/>
<pin name="S" direction="pas"/>
<pin name="G" direction="pas"/>
<pin name="D2" direction="pas"/>
</symbol>
<symbol name="DMOS-N">
<pin name="D" direction="pas"/>
<pin name="S" direction="pas"/>
<pin name="G" direction="pas"/>
</symbol>
<symbol name="MFNS-S3">
<pin name="D1" direction="pas"/>
<pin name="G" direction="pas"/>
<pin name="S1" direction="pas"/>
<pin name="S2" direction="pas"/>
<pin name="S3" direction="pas"/>
</symbol>
<symbol name="EMOS-ND">
<pin name="D" direction="pas"/>
<pin name="S" direction="pas"/>
<pin name="G" direction="pas"/>
</symbol>
<symbol name="EMOS-PD">
<pin name="D" direction="pas"/>
<pin name="S" direction="pas"/>
<pin name="G" direction="pas"/>
</symbol>
<symbol name="EMOS_PD2">
<pin name="S" direction="pas"/>
<pin name="G" direction="pas"/>
<pin name="D" direction="pas"/>
<pin name="D@4" direction="pas"/>
</symbol>
<symbol name="MFPS-D2">
<pin name="G" direction="pas"/>
<pin name="D1" direction="pas"/>
<pin name="S" direction="pas"/>
<pin name="D2" direction="pas"/>
</symbol>
<symbol name="EMOS-ND-DUAL">
<pin name="G1" direction="pas"/>
<pin name="D1" direction="pas"/>
<pin name="S1" direction="pas"/>
<pin name="G2" direction="pas"/>
<pin name="D2" direction="pas"/>
<pin name="S2" direction="pas"/>
</symbol>
<symbol name="EMOS-PD-DUAL">
<pin name="G1" direction="pas"/>
<pin name="D1" direction="pas"/>
<pin name="S1" direction="pas"/>
<pin name="G2" direction="pas"/>
<pin name="D2" direction="pas"/>
<pin name="S2" direction="pas"/>
</symbol>
<symbol name="EMOS_PD4">
<pin name="S" direction="pas"/>
<pin name="G" direction="pas"/>
<pin name="D1" direction="pas"/>
<pin name="D2" direction="pas"/>
<pin name="D3" direction="pas"/>
<pin name="D4" direction="pas"/>
</symbol>
<symbol name="EMOS_ND4">
<pin name="S" direction="pas"/>
<pin name="G" direction="pas"/>
<pin name="D1" direction="pas"/>
<pin name="D2" direction="pas"/>
<pin name="D3" direction="pas"/>
<pin name="D4" direction="pas"/>
</symbol>
<symbol name="SI1869DH">
<pin name="5" direction="pas"/>
<pin name="1" direction="pas"/>
<pin name="2-3" direction="pas"/>
<pin name="4" direction="pas"/>
<pin name="6" direction="pas"/>
</symbol>
</symbols>
<devicesets>
<deviceset name="BUZ10" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS"/>
</gates>
<devices>
<device name="" package="TO220">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BUZ11" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS"/>
</gates>
<devices>
<device name="" package="TO220">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BUZ20" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS"/>
</gates>
<devices>
<device name="" package="TO220">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BUZ23" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt;&lt;p&gt;
100V; 10A; 0,2Ohm</description>
<gates>
<gate name="A" symbol="IGFET-EN-G2DS"/>
</gates>
<devices>
<device name="" package="TO3">
<connects>
<connect gate="A" pin="D" pad="3"/>
<connect gate="A" pin="D1" pad="4"/>
<connect gate="A" pin="G" pad="2"/>
<connect gate="A" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BUZ24" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt;&lt;p&gt;
100V; 32A; 0,060Ohm</description>
<gates>
<gate name="A" symbol="IGFET-EN-G2DS"/>
</gates>
<devices>
<device name="" package="TO3">
<connects>
<connect gate="A" pin="D" pad="3"/>
<connect gate="A" pin="D1" pad="4"/>
<connect gate="A" pin="G" pad="2"/>
<connect gate="A" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BUZ36" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt;&lt;p&gt;
200V; 22A; 0,12Ohm</description>
<gates>
<gate name="A" symbol="IGFET-EN-G2DS"/>
</gates>
<devices>
<device name="" package="TO3">
<connects>
<connect gate="A" pin="D" pad="3"/>
<connect gate="A" pin="D1" pad="4"/>
<connect gate="A" pin="G" pad="2"/>
<connect gate="A" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BUZ71" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; 50V; 14A; 0,1Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS"/>
</gates>
<devices>
<device name="" package="TO220">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BUZ72" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; 100V; 10A; 0,2Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS"/>
</gates>
<devices>
<device name="" package="TO220">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BUZ22" prefix="Q">
<description>&lt;b&gt;N-Channel MOSFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS"/>
</gates>
<devices>
<device name="" package="TO220">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BUZ64" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; 400V; 11,5A; 0,40Ohm</description>
<gates>
<gate name="A" symbol="IGFET-EN-G2DS"/>
</gates>
<devices>
<device name="" package="TO3">
<connects>
<connect gate="A" pin="D" pad="3"/>
<connect gate="A" pin="D1" pad="4"/>
<connect gate="A" pin="G" pad="2"/>
<connect gate="A" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BUZ325" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; 400V; 10,5A; 0,5Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS"/>
</gates>
<devices>
<device name="" package="TO218">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
<device name="V" package="TO218V">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BUZ347" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; 50V; 40A; 0,030Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS"/>
</gates>
<devices>
<device name="" package="TOP3">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BUZ382" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; 400V; 12,5A; 0,4Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS"/>
</gates>
<devices>
<device name="" package="TOP3">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BUZ172" prefix="Q">
<description>&lt;b&gt;P-Channel Enhancement MOSFET&lt;/b&gt; -100V; -5A; 0,8Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EP-GDS"/>
</gates>
<devices>
<device name="" package="TO220">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BUZ171" prefix="Q">
<description>&lt;b&gt;P-Channel Enhancement MOSFET&lt;/b&gt; -50V; 7A; 0,4Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EP-GDS"/>
</gates>
<devices>
<device name="" package="TO220">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BUZ21" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt;&lt;p&gt;
100V; 19A; 0,1Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS"/>
</gates>
<devices>
<device name="" package="TO220">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BUZ45" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt;&lt;p&gt;
500V; 9,5A; 0,6Ohm</description>
<gates>
<gate name="A" symbol="IGFET-EN-G2DS"/>
</gates>
<devices>
<device name="" package="TO3">
<connects>
<connect gate="A" pin="D" pad="3"/>
<connect gate="A" pin="D1" pad="4"/>
<connect gate="A" pin="G" pad="2"/>
<connect gate="A" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BUZ60" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt;&lt;p&gt;
400V; 5,5A; 1,0Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS"/>
</gates>
<devices>
<device name="" package="TO220">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BUZ50A" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt;&lt;p&gt;
1000V; 2,5A; 5,0Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS"/>
</gates>
<devices>
<device name="" package="TO220">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BUZ230" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; 1000V; 5,5A; 2,0Ohm</description>
<gates>
<gate name="A" symbol="IGFET-EN-G2DS"/>
</gates>
<devices>
<device name="" package="TO3">
<connects>
<connect gate="A" pin="D" pad="3"/>
<connect gate="A" pin="D1" pad="4"/>
<connect gate="A" pin="G" pad="2"/>
<connect gate="A" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BSS101" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS"/>
</gates>
<devices>
<device name="" package="TO92">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="2"/>
<connect gate="G$1" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BSS92" prefix="Q">
<description>&lt;b&gt;P-Channel Enhancement MOSFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="IGFET-EP-GDS"/>
</gates>
<devices>
<device name="" package="TO92">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BSS295" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS"/>
</gates>
<devices>
<device name="" package="TO92">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BSS296" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS"/>
</gates>
<devices>
<device name="" package="TO92">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BSS97" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS"/>
</gates>
<devices>
<device name="" package="TO202">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="3"/>
<connect gate="G$1" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BSS110" prefix="Q">
<description>&lt;b&gt;P-Channel Enhancement MOSFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="IGFET-EP-GDS"/>
</gates>
<devices>
<device name="" package="TO92">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="2"/>
<connect gate="G$1" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="IRF540" prefix="Q">
<description>&lt;b&gt;N-Channel MOSFET&lt;/b&gt;&lt;p&gt;
(HEXFET); 100V; 28A; 0,077Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS"/>
</gates>
<devices>
<device name="" package="TO220">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="IRF510" prefix="Q">
<description>&lt;b&gt;N-Channel MOSFET&lt;/b&gt;&lt;p&gt;
(HEXFET); 100V; 5,6A; 0,54Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS"/>
</gates>
<devices>
<device name="" package="TO220">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="IRF620" prefix="Q">
<description>&lt;b&gt;N-Channel MOSFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS"/>
</gates>
<devices>
<device name="" package="TO220">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="IRF840" prefix="Q">
<description>&lt;b&gt;N-Channel MOSFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS"/>
</gates>
<devices>
<device name="" package="TO220">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="IRF330" prefix="Q">
<description>&lt;b&gt;N-Channel MOSFET&lt;/b&gt;&lt;p&gt;
400V; 5,9A; 1,0Ohm (=BUZ63)</description>
<gates>
<gate name="A" symbol="IGFET-EN-G2DS"/>
</gates>
<devices>
<device name="" package="TO3">
<connects>
<connect gate="A" pin="D" pad="3"/>
<connect gate="A" pin="D1" pad="4"/>
<connect gate="A" pin="G" pad="2"/>
<connect gate="A" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="IRF350" prefix="Q">
<description>&lt;b&gt;N-Channel MOSFET&lt;/b&gt;&lt;p&gt;
(HEXFET); 400V; 0.3 Ohm; 14A</description>
<gates>
<gate name="A" symbol="IGFET-EN-G2DS"/>
</gates>
<devices>
<device name="" package="TO3">
<connects>
<connect gate="A" pin="D" pad="3"/>
<connect gate="A" pin="D1" pad="4"/>
<connect gate="A" pin="G" pad="2"/>
<connect gate="A" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="2N3819" prefix="Q">
<description>&lt;b&gt;N-Channel Junction FET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="JFET-N"/>
</gates>
<devices>
<device name="" package="TO92">
<connects>
<connect gate="G$1" pin="D" pad="1"/>
<connect gate="G$1" pin="G" pad="2"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="2N3820" prefix="Q">
<description>&lt;b&gt;P-Channel Junction FET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="JFET-P"/>
</gates>
<devices>
<device name="" package="TO92">
<connects>
<connect gate="G$1" pin="D" pad="1"/>
<connect gate="G$1" pin="G" pad="2"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="2N5116" prefix="Q">
<description>&lt;b&gt;P-Channel Junction FET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="JFET-P"/>
</gates>
<devices>
<device name="" package="TO18">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="2"/>
<connect gate="G$1" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BF247" prefix="Q">
<description>&lt;b&gt;N-Channel Junction FET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="JFET-N"/>
</gates>
<devices>
<device name="" package="TO92">
<connects>
<connect gate="G$1" pin="D" pad="1"/>
<connect gate="G$1" pin="G" pad="3"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BF256" prefix="Q">
<description>&lt;b&gt;N-Channel Junction FET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="JFET-N"/>
</gates>
<devices>
<device name="" package="TO92">
<connects>
<connect gate="G$1" pin="D" pad="1"/>
<connect gate="G$1" pin="G" pad="3"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BF245" prefix="Q">
<description>&lt;b&gt;N-Channel Junction FET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="JFET-N"/>
</gates>
<devices>
<device name="" package="TO92">
<connects>
<connect gate="G$1" pin="D" pad="1"/>
<connect gate="G$1" pin="G" pad="3"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BFT10" prefix="Q">
<description>&lt;b&gt;N-Channel Junction FET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="JFET-N"/>
</gates>
<devices>
<device name="" package="TO92">
<connects>
<connect gate="G$1" pin="D" pad="1"/>
<connect gate="G$1" pin="G" pad="3"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BFT11" prefix="Q">
<description>&lt;b&gt;P-Channel Junction FET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="JFET-P"/>
</gates>
<devices>
<device name="" package="TO92">
<connects>
<connect gate="G$1" pin="D" pad="1"/>
<connect gate="G$1" pin="G" pad="3"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="2N4221" prefix="Q">
<description>&lt;b&gt;N-Channel Junction FET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="JFET-N"/>
</gates>
<devices>
<device name="" package="TO72">
<connects>
<connect gate="G$1" pin="D" pad="1"/>
<connect gate="G$1" pin="G" pad="3"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="2N4392" prefix="Q">
<description>&lt;b&gt;N-Channel Junction FET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="JFET-N"/>
</gates>
<devices>
<device name="" package="TO18">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="3"/>
<connect gate="G$1" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="2N4857" prefix="Q">
<description>&lt;b&gt;N-Channel Junction FET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="JFET-N"/>
</gates>
<devices>
<device name="" package="TO18">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="3"/>
<connect gate="G$1" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="IRFD9210" prefix="Q">
<description>&lt;b&gt;P-Channel MOSFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="IGFET-EP-G2DS"/>
</gates>
<devices>
<device name="" package="DIL04">
<connects>
<connect gate="G$1" pin="D" pad="4"/>
<connect gate="G$1" pin="D1" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="SD211" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDSB"/>
</gates>
<devices>
<device name="" package="TO72">
<connects>
<connect gate="G$1" pin="B" pad="4"/>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="3"/>
<connect gate="G$1" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="SD215" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDSB"/>
</gates>
<devices>
<device name="" package="TO72">
<connects>
<connect gate="G$1" pin="B" pad="4"/>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="3"/>
<connect gate="G$1" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="VN66AF" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; 60V; 2A; 3,0Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS"/>
</gates>
<devices>
<device name="" package="TO202">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="2"/>
<connect gate="G$1" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="VN88AF" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; 80V; 2A; 3,0Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS"/>
</gates>
<devices>
<device name="" package="TO202">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="2"/>
<connect gate="G$1" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="LP0701N3" prefix="Q">
<description>&lt;b&gt;P-Channel Enhancement MOSFET&lt;/b&gt; -16,5V; -1,25A; 1,5Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EP-GDS"/>
</gates>
<devices>
<device name="" package="TO-92">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="2"/>
<connect gate="G$1" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="TN0604N3" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; 40V; 4A; 0,75Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS"/>
</gates>
<devices>
<device name="" package="TO-92">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="2"/>
<connect gate="G$1" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="TP0602N3" prefix="Q">
<description>&lt;b&gt;P-Channel Enhancement MOSFET&lt;/b&gt; -20V; -2A; 2,0Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EP-GDS"/>
</gates>
<devices>
<device name="" package="TO-92">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="2"/>
<connect gate="G$1" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="TP0604N3" prefix="Q">
<description>&lt;b&gt;P-Channel Enhancement MOSFET&lt;/b&gt; -40V; -2A; 2,0Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EP-GDS"/>
</gates>
<devices>
<device name="" package="TO-92">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="2"/>
<connect gate="G$1" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="TP0602N2" prefix="Q">
<description>&lt;b&gt;P-Channel Enhancement MOSFET&lt;/b&gt; -20V; -2A; 2,0Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EP-GDS"/>
</gates>
<devices>
<device name="" package="TO-39">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="2"/>
<connect gate="G$1" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="TP0604N2" prefix="Q">
<description>&lt;b&gt;P-Channel Enhancement MOSFET&lt;/b&gt; -40V; -2A; 2,0Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EP-GDS"/>
</gates>
<devices>
<device name="" package="TO-39">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="2"/>
<connect gate="G$1" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="TN0602N2" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; 20V; 4A; 0,85Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS"/>
</gates>
<devices>
<device name="" package="TO-39">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="2"/>
<connect gate="G$1" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="TN0602N3" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; 20V; 4A; 0,75Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS"/>
</gates>
<devices>
<device name="" package="TO-92">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="2"/>
<connect gate="G$1" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="VN0106N9" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; 60V; 0,5A; 3,0Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS"/>
</gates>
<devices>
<device name="" package="TO-52">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="2"/>
<connect gate="G$1" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="2N4093" prefix="Q">
<description>&lt;b&gt;N-Channel Junction FET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="JFET-N"/>
</gates>
<devices>
<device name="" package="TO18">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="3"/>
<connect gate="G$1" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="IRF9530" prefix="Q">
<description>&lt;b&gt;P-Channel MOSFET&lt;/b&gt;&lt;p&gt;
(HEXFET); -100V; -12A; 0,3Ohm</description>
<gates>
<gate name="G$1" symbol="EMOS-PD"/>
</gates>
<devices>
<device name="-H" package="TO220">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
<device name="-V" package="TO220V">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="VN10KM" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/B&gt; (VMOS); 60V; 0,5A; 5,0Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS"/>
</gates>
<devices>
<device name="" package="TO237">
<connects>
<connect gate="G$1" pin="D" pad="1"/>
<connect gate="G$1" pin="G" pad="2"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="VN2222KM" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; (VMOS); 60V; 0,5A; 7,5Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS"/>
</gates>
<devices>
<device name="" package="TO237">
<connects>
<connect gate="G$1" pin="D" pad="1"/>
<connect gate="G$1" pin="G" pad="2"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="TN0604N2" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/B&gt; 40V; 4A; 0,85Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS"/>
</gates>
<devices>
<device name="" package="TO-39">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="2"/>
<connect gate="G$1" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="SUP75N06-08" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; 60V; 75A; 0,008Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS"/>
</gates>
<devices>
<device name="" package="TO220">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="SUP65P06-20" prefix="Q">
<description>&lt;b&gt;P-Channel Enhancement MOSFET&lt;/b&gt; -60V; 60A; 0,020Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EP-GDS"/>
</gates>
<devices>
<device name="" package="TO220">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="FDS5680" prefix="Q">
<description>&lt;b&gt;N-Channel MOSFET&lt;/b&gt;&lt;p&gt;
60V, PowerTrench</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-G4D3S"/>
</gates>
<devices>
<device name="" package="SO08">
<connects>
<connect gate="G$1" pin="D1" pad="5"/>
<connect gate="G$1" pin="D2" pad="6"/>
<connect gate="G$1" pin="D3" pad="7"/>
<connect gate="G$1" pin="D4" pad="8"/>
<connect gate="G$1" pin="G" pad="4"/>
<connect gate="G$1" pin="S1" pad="1"/>
<connect gate="G$1" pin="S2" pad="2"/>
<connect gate="G$1" pin="S3" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BTS117" prefix="U">
<description>HITFET SWITCH</description>
<gates>
<gate name="G$1" symbol="BTS117"/>
</gates>
<devices>
<device name="-H" package="TO220">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="IN" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
<device name="-V" package="TO220V">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="IN" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
<device name="" package="TO220-3-45">
<connects>
<connect gate="G$1" pin="D" pad="4"/>
<connect gate="G$1" pin="IN" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="MPF102" prefix="Q">
<description>&lt;b&gt;N-Channel Junction FET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="JFET-N"/>
</gates>
<devices>
<device name="" package="TO92">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="J174" prefix="Q">
<description>&lt;b&gt;P-Channel FET&lt;/b&gt;&lt;p&gt;
-100mA; 85 Ohms</description>
<gates>
<gate name="G$1" symbol="JFET-P"/>
</gates>
<devices>
<device name="" package="TO92">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="2"/>
<connect gate="G$1" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="TN2106" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement DMOS FET/b&gt;&lt;p&gt;
60V; 0,28A; 2,5 Ohm</description>
<gates>
<gate name="G$1" symbol="EMOS-N"/>
</gates>
<devices>
<device name="N3" package="TO-92">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="2"/>
<connect gate="G$1" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
<device name="K1" package="SOT23">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="2N5460" prefix="Q">
<description>&lt;b&gt;P-Channel Junction FET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="JFET-P"/>
</gates>
<devices>
<device name="" package="TO92">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="2N5457" prefix="Q">
<description>&lt;b&gt;N-Channel Junction FET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="JFET-N"/>
</gates>
<devices>
<device name="" package="TO92">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="IRF640" prefix="Q">
<description>&lt;b&gt;HEXFET Power MOSFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="MFNS"/>
</gates>
<devices>
<device name="N-V" package="TO220V">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
<device name="N-H" package="TO220">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
<device name="NS" package="D2PAK">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="IRF1010" prefix="Q">
<description>&lt;b&gt;N-ChannelMOSFET&lt;/b&gt;&lt;p&gt;
(HEXFET); 55V; 80A</description>
<gates>
<gate name="G$1" symbol="MFNS"/>
</gates>
<devices>
<device name="NS" package="D2PAK">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
<device name="NL" package="TO262-H">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="IRFR3504" prefix="Q">
<description>&lt;b&gt;N-Channel HEXFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="MFNS"/>
</gates>
<devices>
<device name="" package="DPAK">
<connects>
<connect gate="G$1" pin="D" pad="4"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="MMBFJ175" prefix="Q">
<description>&lt;b&gt;P-Channel Switch FET&lt;/b&gt;&lt;p&gt;
-60mA; 125 Ohms</description>
<gates>
<gate name="G$1" symbol="JFET-P"/>
</gates>
<devices>
<device name="" package="SOT23">
<connects>
<connect gate="G$1" pin="D" pad="1"/>
<connect gate="G$1" pin="G" pad="3"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="MMBFJ176" prefix="Q">
<description>&lt;b&gt;P-Channel Switch FET&lt;/b&gt; -25mA; 250 Ohms</description>
<gates>
<gate name="G$1" symbol="JFET-P"/>
</gates>
<devices>
<device name="" package="SOT23">
<connects>
<connect gate="G$1" pin="D" pad="1"/>
<connect gate="G$1" pin="G" pad="3"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="MMBFJ177">
<description>&lt;b&gt;P-Channel Switch FET&lt;/b&gt; -20mA; 300 Ohms</description>
<gates>
<gate name="G$1" symbol="JFET-P"/>
</gates>
<devices>
<device name="" package="SOT23">
<connects>
<connect gate="G$1" pin="D" pad="1"/>
<connect gate="G$1" pin="G" pad="3"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="IRF7811W" prefix="Q">
<description>&lt;b&gt;N-Channel power MOSFET &lt;/b&gt;
&lt;p&gt;
Rds=9.0mOhm,
Qg=18nC,
Vgs=12V</description>
<gates>
<gate name="G$1" symbol="MFNS-D4S3"/>
</gates>
<devices>
<device name="" package="SO08">
<connects>
<connect gate="G$1" pin="D1" pad="5"/>
<connect gate="G$1" pin="D2" pad="6"/>
<connect gate="G$1" pin="D3" pad="7"/>
<connect gate="G$1" pin="D4" pad="8"/>
<connect gate="G$1" pin="G" pad="4"/>
<connect gate="G$1" pin="S1" pad="1"/>
<connect gate="G$1" pin="S2" pad="2"/>
<connect gate="G$1" pin="S3" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="NTD3055-094" prefix="Q">
<description>&lt;b&gt;N-Channel MOSFET&lt;/b&gt;&lt;p&gt; ON Semi, 12A, 60V</description>
<gates>
<gate name="G$1" symbol="MFNS"/>
</gates>
<devices>
<device name="" package="DPAK">
<connects>
<connect gate="G$1" pin="D" pad="4"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="NTD3055-094-1" prefix="Q">
<description>&lt;b&gt;N-Channel MOSFET&lt;/b&gt;&lt;p&gt; ON Semi, 12A, 60V</description>
<gates>
<gate name="G$1" symbol="MFNS-D2"/>
</gates>
<devices>
<device name="" package="DPAK-3">
<connects>
<connect gate="G$1" pin="D1" pad="2"/>
<connect gate="G$1" pin="D2" pad="4"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="NDB6020" prefix="Q">
<description>&lt;b&gt;N-Channel MOSFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="EMOS-N"/>
</gates>
<devices>
<device name="" package="DPAK">
<connects>
<connect gate="G$1" pin="D" pad="4"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
<technology name="NT1"/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="NDS0610" prefix="Q">
<description>&lt;b&gt;P-Channel MOSFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="EMOS-PD"/>
</gates>
<devices>
<device name="" package="SOT23">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="2N7000" prefix="Q">
<description>&lt;b&gt;N-Channel MOSFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="MFNS"/>
</gates>
<devices>
<device name="" package="TO-92">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="2"/>
<connect gate="G$1" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="MMBF4416*" prefix="Q">
<description>&lt;b&gt;N-Channel JFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="JFET-N"/>
</gates>
<devices>
<device name="" package="SOT23">
<connects>
<connect gate="G$1" pin="D" pad="1"/>
<connect gate="G$1" pin="G" pad="3"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
<technology name="LT1"/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="MMBF5484*" prefix="Q">
<description>&lt;b&gt;N-Channel JFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="JFET-N"/>
</gates>
<devices>
<device name="" package="SOT23">
<connects>
<connect gate="G$1" pin="D" pad="1"/>
<connect gate="G$1" pin="G" pad="3"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
<technology name="LT1"/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="MMBFJ170*" prefix="Q">
<description>&lt;b&gt;N-Channel Power MOSFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="MFNS"/>
</gates>
<devices>
<device name="" package="SOT23">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
<technology name="LT1"/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="MMBF4391*" prefix="Q">
<description>&lt;b&gt;N-Channel JFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="JFET-N"/>
</gates>
<devices>
<device name="" package="SOT23">
<connects>
<connect gate="G$1" pin="D" pad="1"/>
<connect gate="G$1" pin="G" pad="3"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
<technology name="LT1"/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="MMBF5460*" prefix="Q">
<description>&lt;b&gt;N-Channel JFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="JFET-N"/>
</gates>
<devices>
<device name="" package="SOT23">
<connects>
<connect gate="G$1" pin="D" pad="1"/>
<connect gate="G$1" pin="G" pad="3"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
<technology name="LT1"/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="MMBF5457*" prefix="Q">
<description>&lt;b&gt;N-Channel JFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="JFET-N"/>
</gates>
<devices>
<device name="" package="SOT23">
<connects>
<connect gate="G$1" pin="D" pad="1"/>
<connect gate="G$1" pin="G" pad="3"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
<technology name="LT1"/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="MMBF0201N*" prefix="Q">
<description>&lt;b&gt;N-Channel Power MOSFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="MFNS"/>
</gates>
<devices>
<device name="" package="SOT23">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
<technology name="LT1"/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="MMBFJ309*" prefix="Q">
<description>&lt;b&gt;N-Channel JFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="JFET-N"/>
</gates>
<devices>
<device name="" package="SOT23">
<connects>
<connect gate="G$1" pin="D" pad="1"/>
<connect gate="G$1" pin="G" pad="3"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
<technology name="LT1"/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="MMBF0202P*" prefix="Q">
<description>&lt;b&gt;P-Channel Power MOSFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="MFPS"/>
</gates>
<devices>
<device name="" package="SOT23">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
<technology name="LT1"/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="SI7370" prefix="Q">
<description>&lt;b&gt;N-Channel MOSFET&lt;/b&gt; - 60v</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GD3S"/>
</gates>
<devices>
<device name="" package="POWERPAK-SO-08">
<connects>
<connect gate="G$1" pin="D" pad="5-8"/>
<connect gate="G$1" pin="G" pad="4"/>
<connect gate="G$1" pin="S1" pad="1"/>
<connect gate="G$1" pin="S2" pad="2"/>
<connect gate="G$1" pin="S3" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="FDC6561AN" prefix="Q">
<description>Dual N-Channel MOSFET&lt;p&gt;
Logic Level PowerTrench</description>
<gates>
<gate name="A" symbol="EMOS-ND"/>
<gate name="B" symbol="EMOS-ND"/>
</gates>
<devices>
<device name="" package="SSOT-6">
<connects>
<connect gate="A" pin="D" pad="6"/>
<connect gate="A" pin="G" pad="1"/>
<connect gate="A" pin="S" pad="5"/>
<connect gate="B" pin="D" pad="4"/>
<connect gate="B" pin="G" pad="3"/>
<connect gate="B" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="FDC6561AN_D" prefix="Q">
<description>Dual N-Channel MOSFET&lt;p&gt;
Logic Level PowerTrench</description>
<gates>
<gate name="A" symbol="EMOS-ND-DUAL"/>
</gates>
<devices>
<device name="" package="SSOT-6">
<connects>
<connect gate="A" pin="D1" pad="6"/>
<connect gate="A" pin="D2" pad="4"/>
<connect gate="A" pin="G1" pad="1"/>
<connect gate="A" pin="G2" pad="3"/>
<connect gate="A" pin="S1" pad="5"/>
<connect gate="A" pin="S2" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="STD1NK60" prefix="Q">
<description>N-CHANNEL 600V - 8 Ohm - 1A &lt;p&gt;
SuperMESH MOSFET</description>
<gates>
<gate name="G$1" symbol="MFNS"/>
</gates>
<devices>
<device name="" package="DPAK">
<connects>
<connect gate="G$1" pin="D" pad="4"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="ZXMN6A07Z" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="EMOS-ND"/>
</gates>
<devices>
<device name="" package="SOT89">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="DN2530" prefix="Q">
<description>DMOS FET, N-Channel&lt;p&gt;
Supertex Inc.</description>
<gates>
<gate name="G$1" symbol="DMOS-ND2"/>
</gates>
<devices>
<device name="" package="SOT89-4">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="D2" pad="4"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="SI7106DN" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="MFNS-S3"/>
</gates>
<devices>
<device name="" package="POWERPAK-1212-8">
<connects>
<connect gate="G$1" pin="D1" pad="5-8"/>
<connect gate="G$1" pin="G" pad="4"/>
<connect gate="G$1" pin="S1" pad="1"/>
<connect gate="G$1" pin="S2" pad="2"/>
<connect gate="G$1" pin="S3" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="SI7960" prefix="Q">
<description>Dual N-Channel 60-V (D-S) MOSFET</description>
<gates>
<gate name="A" symbol="EMOS-ND"/>
<gate name="B" symbol="EMOS-ND"/>
</gates>
<devices>
<device name="" package="POWERPAK-SO-08-DUAL">
<connects>
<connect gate="A" pin="D" pad="7-8"/>
<connect gate="A" pin="G" pad="2"/>
<connect gate="A" pin="S" pad="1"/>
<connect gate="B" pin="D" pad="5-6"/>
<connect gate="B" pin="G" pad="4"/>
<connect gate="B" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="ZXM61N02F" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="EMOS-ND"/>
</gates>
<devices>
<device name="" package="SOT23">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="FDV304P" prefix="Q">
<description>&lt;b&gt;P-Channel MOSFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="EMOS-PD"/>
</gates>
<devices>
<device name="" package="SOT23">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="IRF614" prefix="Q">
<description>N-Channel MOSFET&lt;/b&gt;&lt;p&gt;
(HEXFET) N-CHANNEL 250V 2.7A TO-220AB</description>
<gates>
<gate name="G$1" symbol="MFNS"/>
</gates>
<devices>
<device name="" package="D2PAK">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="ZXMN6A11G" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="MFNS-D2"/>
</gates>
<devices>
<device name="" package="SOT223">
<connects>
<connect gate="G$1" pin="D1" pad="2"/>
<connect gate="G$1" pin="D2" pad="4"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="LSK389-X-" prefix="Q">
<description>&lt;b&gt;N-Channel JFET&lt;/b&gt;&lt;p&gt;
Monolithic Dual, Ultra Low Noise</description>
<gates>
<gate name="A" symbol="JFET-N"/>
<gate name="B" symbol="JFET-N"/>
</gates>
<devices>
<device name="SOIC-8" package="SO08">
<connects>
<connect gate="A" pin="D" pad="2"/>
<connect gate="A" pin="G" pad="4"/>
<connect gate="A" pin="S" pad="1"/>
<connect gate="B" pin="D" pad="6"/>
<connect gate="B" pin="G" pad="8"/>
<connect gate="B" pin="S" pad="5"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
<device name="71" package="TO71">
<connects>
<connect gate="A" pin="D" pad="2"/>
<connect gate="A" pin="G" pad="3"/>
<connect gate="A" pin="S" pad="1"/>
<connect gate="B" pin="D" pad="6"/>
<connect gate="B" pin="G" pad="7"/>
<connect gate="B" pin="S" pad="5"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="FQT5P10" prefix="Q">
<description>&lt;b&gt;P-Channel  MOSFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="EMOS_PD2"/>
</gates>
<devices>
<device name="" package="SOT223">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="D@4" pad="4"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="FQD17P06" prefix="Q">
<description>&lt;b&gt;P-Channel  QFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="EMOS-PD"/>
</gates>
<devices>
<device name="" package="DPAK">
<connects>
<connect gate="G$1" pin="D" pad="4"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="DN2535" prefix="Q">
<description>DMOS FET, N-Channel&lt;p&gt;
Supertex Inc.</description>
<gates>
<gate name="G$1" symbol="DMOS-N"/>
</gates>
<devices>
<device name="N5" package="TO220">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
<device name="N5_V" package="TO220V">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
<device name="N3" package="TO-92">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="2"/>
<connect gate="G$1" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
<device name="N8" package="SOT89">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
<device name="N5_RM" package="TO220-RM">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="3N1877" prefix="Q">
<description>FET</description>
<gates>
<gate name="G$1" symbol="IGFET-DN-2GDS"/>
</gates>
<devices>
<device name="" package="TO72">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G1" pad="1"/>
<connect gate="G$1" pin="G2" pad="2"/>
<connect gate="G$1" pin="S" pad="4"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="FDV301N" prefix="Q">
<description>&lt;b&gt;N-Channel MOSFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="EMOS-ND"/>
</gates>
<devices>
<device name="" package="SOT23">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="IRFR9024" prefix="Q">
<description>&lt;b&gt;P-Channel HEXFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="MFPS"/>
</gates>
<devices>
<device name="" package="DPAK">
<connects>
<connect gate="G$1" pin="D" pad="4"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="FQU17P06" prefix="Q">
<description>&lt;b&gt;P-Channel  MOSFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="EMOS_PD2"/>
</gates>
<devices>
<device name="" package="DPAK-3">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="D@4" pad="4"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="FDN304P" prefix="Q">
<description>&lt;b&gt;P-Channel MOSFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="EMOS-PD"/>
</gates>
<devices>
<device name="" package="SSOT-3">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="STD5NM60" prefix="Q">
<description>MOSFET - MDmesh&lt;p&gt;
N-CHANNEL 650V@Tjmax - 0.9 ohm - 8A</description>
<gates>
<gate name="G$1" symbol="MFNS"/>
</gates>
<devices>
<device name="T4" package="DPAK">
<connects>
<connect gate="G$1" pin="D" pad="4"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
<device name="-1_V" package="IPAKV">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
<device name="-1" package="IPAK">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="STP8NM60" prefix="Q">
<description>MOSFET - MDmesh&lt;p&gt;
N-CHANNEL 650V@Tjmax - 0.9 ohm - 8A</description>
<gates>
<gate name="G$1" symbol="MFNS"/>
</gates>
<devices>
<device name="_V" package="TO220V">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
<device name="" package="TO220">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
<device name="T4" package="D2PAK">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="2N7002*" prefix="Q">
<description>&lt;b&gt;N-Channel MOSFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="EMOS-ND"/>
</gates>
<devices>
<device name="" package="SOT23">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
<technology name="LT1"/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="NDS7002A" prefix="Q">
<description>&lt;b&gt;N-Channel MOSFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="EMOS-ND"/>
</gates>
<devices>
<device name="" package="SOT23">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="FDV305N" prefix="Q">
<description>&lt;b&gt;N-Channel MOSFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="EMOS-ND"/>
</gates>
<devices>
<device name="" package="SOT23">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BSS123*" prefix="Q">
<description>Power MOSFET</description>
<gates>
<gate name="G$1" symbol="EMOS-ND"/>
</gates>
<devices>
<device name="" package="SOT23">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
<technology name="LT1"/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BSS138*" prefix="Q">
<description>Power MOSFET</description>
<gates>
<gate name="G$1" symbol="EMOS-ND"/>
</gates>
<devices>
<device name="" package="SOT23">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
<technology name="LT1"/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BSS84*" prefix="Q">
<description>Power MOSFET</description>
<gates>
<gate name="G$1" symbol="EMOS-PD"/>
</gates>
<devices>
<device name="" package="SOT23">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
<technology name="LT1"/>
</technologies>
</device>
<device name="W" package="SOT323-R">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="MGSF1N02*" prefix="Q">
<description>Power MOSFET</description>
<gates>
<gate name="G$1" symbol="EMOS-ND"/>
</gates>
<devices>
<device name="" package="SOT23">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
<technology name="LT1"/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="MGSF1N03*" prefix="Q">
<description>Power MOSFET, N-Channel</description>
<gates>
<gate name="G$1" symbol="EMOS-ND"/>
</gates>
<devices>
<device name="" package="SOT23">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
<technology name="LT1"/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="NTS2101P" prefix="Q">
<description>&lt;b&gt;P-Channel MOSFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="EMOS-PD"/>
</gates>
<devices>
<device name="" package="SC70">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="MRF1513*" prefix="Q">
<description>&lt;b&gt;RF Power  MOSFET&lt;/b&gt; - N Channel</description>
<gates>
<gate name="G$1" symbol="EMOS-N"/>
</gates>
<devices>
<device name="" package="PLD-15">
<connects>
<connect gate="G$1" pin="D" pad="1"/>
<connect gate="G$1" pin="G" pad="2"/>
<connect gate="G$1" pin="S" pad="3-4"/>
</connects>
<technologies>
<technology name=""/>
<technology name="NT1"/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="ZXMN6A25K" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt;&lt;p&gt;
60V, 10A</description>
<gates>
<gate name="G$1" symbol="EMOS-ND"/>
</gates>
<devices>
<device name="" package="DPAK">
<connects>
<connect gate="G$1" pin="D" pad="4"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="STD12NF06" prefix="Q">
<description>MOSFET -STripFET II&lt;p&gt;
N-channel 60V - 0.08 ohm - 12A</description>
<gates>
<gate name="G$1" symbol="MFNS"/>
</gates>
<devices>
<device name="T4" package="DPAK">
<connects>
<connect gate="G$1" pin="D" pad="4"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
<device name="-1" package="IPAKV">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="FDN338P" prefix="Q">
<description>&lt;b&gt;P-Channel MOSFET&lt;/b&gt;&lt;p&gt;
2.5V Specified PowerTrench</description>
<gates>
<gate name="G$1" symbol="EMOS-PD"/>
</gates>
<devices>
<device name="" package="SSOT-3">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="IRF7343" prefix="Q">
<description>&lt;b&gt;MOSFET&lt;/b&gt;&lt;p&gt;
Dual N &amp; P Channel Power HEXFET</description>
<gates>
<gate name="A" symbol="MFNS-D2"/>
<gate name="B" symbol="MFPS-D2"/>
</gates>
<devices>
<device name="" package="SO08">
<connects>
<connect gate="A" pin="D1" pad="8"/>
<connect gate="A" pin="D2" pad="7"/>
<connect gate="A" pin="G" pad="2"/>
<connect gate="A" pin="S" pad="1"/>
<connect gate="B" pin="D1" pad="5"/>
<connect gate="B" pin="D2" pad="6"/>
<connect gate="B" pin="G" pad="4"/>
<connect gate="B" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="NTF3055L108" prefix="Q">
<description>&lt;b&gt;N-Channel MOSFET&lt;/b&gt;&lt;p&gt; 3.0 A, 60 V</description>
<gates>
<gate name="G$1" symbol="EMOS_ND2"/>
</gates>
<devices>
<device name="" package="SOT223">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="D2" pad="4"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="DMN2170U" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="EMOS-ND"/>
</gates>
<devices>
<device name="" package="SOT23">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="FDN335N" prefix="Q">
<description>&lt;b&gt;N-Channel MOSFET&lt;/b&gt;&lt;p&gt;
2.5V Specified PowerTrench</description>
<gates>
<gate name="G$1" symbol="EMOS-ND"/>
</gates>
<devices>
<device name="" package="SSOT-3">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="FDG6316P" prefix="Q">
<description>P-Channel MOSFET&lt;p&gt;
1.8V Specified PowerTrench</description>
<gates>
<gate name="A" symbol="EMOS-PD"/>
<gate name="B" symbol="EMOS-PD"/>
</gates>
<devices>
<device name="" package="SC70-6L">
<connects>
<connect gate="A" pin="D" pad="3"/>
<connect gate="A" pin="G" pad="2"/>
<connect gate="A" pin="S" pad="1"/>
<connect gate="B" pin="D" pad="6"/>
<connect gate="B" pin="G" pad="5"/>
<connect gate="B" pin="S" pad="4"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="FDN302P" prefix="Q">
<description>P-Channel MOSFET&lt;p&gt;
2.5V Specified PowerTrench</description>
<gates>
<gate name="G$1" symbol="EMOS-PD"/>
</gates>
<devices>
<device name="" package="SSOT-3">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="FDV303N">
<description>Digital FET, N-Channel</description>
<gates>
<gate name="G$1" symbol="EMOS-ND"/>
</gates>
<devices>
<device name="" package="SOT23">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="FDN337N" prefix="Q">
<description>N-Channel MOSFET&lt;p&gt;
Logic Level Enhancement Mode Field Effect Transistor</description>
<gates>
<gate name="G$1" symbol="EMOS-ND"/>
</gates>
<devices>
<device name="" package="SSOT-3">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="FDN359AN" prefix="Q">
<description>N-Channel MOSFET&lt;p&gt;
Logic Level PowerTrench</description>
<gates>
<gate name="G$1" symbol="EMOS-ND"/>
</gates>
<devices>
<device name="" package="SSOT-3">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="FDN359BN" prefix="Q">
<description>N-Channel MOSFET&lt;p&gt;
Logic Level PowerTrench</description>
<gates>
<gate name="G$1" symbol="EMOS-ND"/>
</gates>
<devices>
<device name="" package="SSOT-3">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="FDN361BN" prefix="Q">
<description>N-Channel MOSFET&lt;p&gt;
30V, Logic Level, PowerTrench</description>
<gates>
<gate name="G$1" symbol="EMOS-ND"/>
</gates>
<devices>
<device name="" package="SSOT-3">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="FDN5630" prefix="Q">
<description>N-Channel MOSFET&lt;p&gt;
60V, PowerTrench</description>
<gates>
<gate name="G$1" symbol="EMOS-ND"/>
</gates>
<devices>
<device name="" package="SSOT-3">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="FDN306P" prefix="Q">
<description>P-Channel MOSFET&lt;p&gt;
1.8V Specified PowerTrench</description>
<gates>
<gate name="G$1" symbol="EMOS-PD"/>
</gates>
<devices>
<device name="" package="SSOT-3">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="FDN336P" prefix="Q">
<description>P-Channel MOSFET&lt;p&gt;
2.5V Specified PowerTrench</description>
<gates>
<gate name="G$1" symbol="EMOS-PD"/>
</gates>
<devices>
<device name="" package="SSOT-3">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="FDN340P" prefix="Q">
<description>P-Channel MOSFET&lt;p&gt;
Logic Level, PowerTrench MOSFET</description>
<gates>
<gate name="G$1" symbol="EMOS-PD"/>
</gates>
<devices>
<device name="" package="SSOT-3">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="FDN352AP" prefix="Q">
<description>P-Channel MOSFET&lt;p&gt;
PowerTrench</description>
<gates>
<gate name="G$1" symbol="EMOS-PD"/>
</gates>
<devices>
<device name="" package="SSOT-3">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="NDS332P" prefix="Q">
<description>P-Channel Logic Level Enhancement Mode Field Effect Transistor</description>
<gates>
<gate name="G$1" symbol="EMOS-PD"/>
</gates>
<devices>
<device name="" package="SSOT-3">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="FDN327N" prefix="Q">
<description>N-Channel MOSFET&lt;p&gt;
1.8 Vgs Specified PowerTrench</description>
<gates>
<gate name="G$1" symbol="EMOS-ND"/>
</gates>
<devices>
<device name="" package="SSOT-3">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="NDS352AP" prefix="Q">
<description>P-Channel Logic Level Enhancement Mode Field Effect Transistor</description>
<gates>
<gate name="G$1" symbol="EMOS-PD"/>
</gates>
<devices>
<device name="" package="SSOT-3">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="FDN358P" prefix="Q">
<description>Single P-Channel MOSFET&lt;p&gt;
Logic Level, PowerTrench</description>
<gates>
<gate name="G$1" symbol="EMOS-PD"/>
</gates>
<devices>
<device name="" package="SSOT-3">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="FDN360P" prefix="Q">
<description>P-Channel MOSFET&lt;p&gt;
PowerTrench</description>
<gates>
<gate name="G$1" symbol="EMOS-PD"/>
</gates>
<devices>
<device name="" package="SSOT-3">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="NDS356AP" prefix="Q">
<description>P-Channel Logic Level Enhancement Mode Field Effect Transistor</description>
<gates>
<gate name="G$1" symbol="EMOS-PD"/>
</gates>
<devices>
<device name="" package="SSOT-3">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="FDN5618P" prefix="Q">
<description>P-Channel MOSFET&lt;p&gt;
60V Logic Level PowerTrench</description>
<gates>
<gate name="G$1" symbol="EMOS-PD"/>
</gates>
<devices>
<device name="" package="SSOT-3">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="NDS355N" prefix="Q">
<description>N-Channel Logic Level Enhancement Mode Field Effect Transistor</description>
<gates>
<gate name="G$1" symbol="EMOS-ND"/>
</gates>
<devices>
<device name="" package="SSOT-3">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="MMBF4392*" prefix="Q">
<description>&lt;b&gt;N-Channel JFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="JFET-N"/>
</gates>
<devices>
<device name="" package="SOT23">
<connects>
<connect gate="G$1" pin="D" pad="1"/>
<connect gate="G$1" pin="G" pad="3"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
<technology name="LT1"/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="MMBF4393*" prefix="Q">
<description>&lt;b&gt;N-Channel JFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="JFET-N"/>
</gates>
<devices>
<device name="" package="SOT23">
<connects>
<connect gate="G$1" pin="D" pad="1"/>
<connect gate="G$1" pin="G" pad="3"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
<technology name="LT1"/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="FDV302P" prefix="Q">
<description>Digital FET, P-Channel</description>
<gates>
<gate name="G$1" symbol="EMOS-PD"/>
</gates>
<devices>
<device name="" package="SOT23">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="NDS0605" prefix="Q">
<description>P-Channel Enhancement Mode Field Effect Transistor</description>
<gates>
<gate name="G$1" symbol="EMOS-PD"/>
</gates>
<devices>
<device name="" package="SOT23">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="FDN339AN" prefix="Q">
<description>N-Channe MOSFET&lt;p&gt;
2.5V Specified PowerTrench</description>
<gates>
<gate name="G$1" symbol="EMOS-ND"/>
</gates>
<devices>
<device name="" package="SSOT-3">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="NDS331N" prefix="Q">
<description>N-Channel Logic Level Enhancement Mode Field Effect Transistor</description>
<gates>
<gate name="G$1" symbol="EMOS-ND"/>
</gates>
<devices>
<device name="" package="SSOT-3">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="NDS335N" prefix="Q">
<description>N-Channel Logic Level Enhancement Mode Field Effect Transistor</description>
<gates>
<gate name="G$1" symbol="EMOS-ND"/>
</gates>
<devices>
<device name="" package="SSOT-3">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="FDC6305N">
<description>Dual N-Channel MOSFET&lt;p&gt;
2.5V Specified PowerTrench</description>
<gates>
<gate name="A" symbol="EMOS-ND"/>
<gate name="B" symbol="EMOS-ND"/>
</gates>
<devices>
<device name="" package="SSOT-6">
<connects>
<connect gate="A" pin="D" pad="6"/>
<connect gate="A" pin="G" pad="1"/>
<connect gate="A" pin="S" pad="5"/>
<connect gate="B" pin="D" pad="4"/>
<connect gate="B" pin="G" pad="3"/>
<connect gate="B" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="NDC7002N" prefix="Q">
<description>Dual N-Channel Enhancement Mode Field Effect Transistor</description>
<gates>
<gate name="A" symbol="EMOS-ND"/>
<gate name="B" symbol="EMOS-ND"/>
</gates>
<devices>
<device name="" package="SSOT-6">
<connects>
<connect gate="A" pin="D" pad="6"/>
<connect gate="A" pin="G" pad="1"/>
<connect gate="A" pin="S" pad="5"/>
<connect gate="B" pin="D" pad="4"/>
<connect gate="B" pin="G" pad="3"/>
<connect gate="B" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="NDC7002N_D" prefix="Q">
<description>Dual N-Channel Enhancement Mode Field Effect Transistor</description>
<gates>
<gate name="A" symbol="EMOS-ND-DUAL"/>
</gates>
<devices>
<device name="" package="SSOT-6">
<connects>
<connect gate="A" pin="D1" pad="6"/>
<connect gate="A" pin="D2" pad="4"/>
<connect gate="A" pin="G1" pad="1"/>
<connect gate="A" pin="G2" pad="3"/>
<connect gate="A" pin="S1" pad="5"/>
<connect gate="A" pin="S2" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="FDC6312P" prefix="Q">
<description>Dual P-Channel MOSFET&lt;p&gt;
1.8V PowerTrench</description>
<gates>
<gate name="A" symbol="EMOS-PD"/>
<gate name="B" symbol="EMOS-PD"/>
</gates>
<devices>
<device name="" package="SSOT-6">
<connects>
<connect gate="A" pin="D" pad="6"/>
<connect gate="A" pin="G" pad="1"/>
<connect gate="A" pin="S" pad="5"/>
<connect gate="B" pin="D" pad="4"/>
<connect gate="B" pin="G" pad="3"/>
<connect gate="B" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="FDC6312P_D" prefix="Q">
<description>Dual P-Channel MOSFET&lt;p&gt;
1.8V PowerTrench Specified</description>
<gates>
<gate name="A" symbol="EMOS-PD-DUAL"/>
</gates>
<devices>
<device name="" package="SSOT-6">
<connects>
<connect gate="A" pin="D1" pad="6"/>
<connect gate="A" pin="D2" pad="4"/>
<connect gate="A" pin="G1" pad="1"/>
<connect gate="A" pin="G2" pad="3"/>
<connect gate="A" pin="S1" pad="5"/>
<connect gate="A" pin="S2" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="FDC6306P" prefix="Q">
<description>Dual P-Channel MOSFET&lt;p&gt;
1.8V PowerTrench Specified</description>
<gates>
<gate name="A" symbol="EMOS-PD"/>
<gate name="B" symbol="EMOS-PD"/>
</gates>
<devices>
<device name="" package="SSOT-6">
<connects>
<connect gate="A" pin="D" pad="6"/>
<connect gate="A" pin="G" pad="1"/>
<connect gate="A" pin="S" pad="5"/>
<connect gate="B" pin="D" pad="4"/>
<connect gate="B" pin="G" pad="3"/>
<connect gate="B" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="FDC6306P_D" prefix="Q">
<description>Dual P-Channel MOSFET&lt;p&gt;
1.8V PowerTrench Specified</description>
<gates>
<gate name="A" symbol="EMOS-PD-DUAL"/>
</gates>
<devices>
<device name="" package="SSOT-6">
<connects>
<connect gate="A" pin="D1" pad="6"/>
<connect gate="A" pin="D2" pad="4"/>
<connect gate="A" pin="G1" pad="1"/>
<connect gate="A" pin="G2" pad="3"/>
<connect gate="A" pin="S1" pad="5"/>
<connect gate="A" pin="S2" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="FDC6305N_D" prefix="Q">
<description>Dual N-Channel MOSFET&lt;p&gt;
2.5V Specified PowerTrench</description>
<gates>
<gate name="G$1" symbol="EMOS-ND-DUAL"/>
</gates>
<devices>
<device name="" package="SSOT-6">
<connects>
<connect gate="G$1" pin="D1" pad="6"/>
<connect gate="G$1" pin="D2" pad="4"/>
<connect gate="G$1" pin="G1" pad="1"/>
<connect gate="G$1" pin="G2" pad="3"/>
<connect gate="G$1" pin="S1" pad="5"/>
<connect gate="G$1" pin="S2" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="FDG6316P_D" prefix="Q">
<description>P-Channel MOSFET&lt;p&gt;
1.8V Specified PowerTrench</description>
<gates>
<gate name="G$1" symbol="EMOS-PD-DUAL"/>
</gates>
<devices>
<device name="" package="SSOT-6">
<connects>
<connect gate="G$1" pin="D1" pad="6"/>
<connect gate="G$1" pin="D2" pad="3"/>
<connect gate="G$1" pin="G1" pad="2"/>
<connect gate="G$1" pin="G2" pad="5"/>
<connect gate="G$1" pin="S1" pad="1"/>
<connect gate="G$1" pin="S2" pad="4"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BSS83P*" prefix="Q">
<description>Power MOSFET</description>
<gates>
<gate name="G$1" symbol="EMOS-PD"/>
</gates>
<devices>
<device name="" package="SOT23">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
<technology name="LT1"/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BS250" prefix="Q">
<description>DMOS FET</description>
<gates>
<gate name="G$1" symbol="EMOS-PD"/>
</gates>
<devices>
<device name="F" package="SOT23">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
<device name="KL" package="TO92">
<connects>
<connect gate="G$1" pin="D" pad="1"/>
<connect gate="G$1" pin="G" pad="2"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
<device name="P" package="E3LINE">
<connects>
<connect gate="G$1" pin="D" pad="1"/>
<connect gate="G$1" pin="G" pad="2"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BF244" prefix="Q">
<description>&lt;b&gt;N-Channel Junction FET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="JFET-N"/>
</gates>
<devices>
<device name="" package="TO92">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="2"/>
<connect gate="G$1" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="PN4416" prefix="Q">
<description>&lt;b&gt;N-Channel Junction FET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="JFET-N"/>
</gates>
<devices>
<device name="" package="TO92">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="SI4840DY" prefix="Q">
<description>&lt;b&gt;N-Channel MOSFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="EMOS-ND"/>
</gates>
<devices>
<device name="" package="SO08-E3">
<connects>
<connect gate="G$1" pin="D" pad="5-8"/>
<connect gate="G$1" pin="G" pad="4"/>
<connect gate="G$1" pin="S" pad="1-3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="VNN7NV04" prefix="Q">
<description>POWER MOSFET N-CH&lt;p&gt;
OMNIFET-II 40V 6A SOT223</description>
<gates>
<gate name="G$1" symbol="EMOS_ND2"/>
</gates>
<devices>
<device name="" package="SOT223">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="D2" pad="4"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="VND7NV04" prefix="Q">
<description>POWER MOSFET N-CH&lt;p&gt;
OMNIFET-II 40V 6A DPAK</description>
<gates>
<gate name="G$1" symbol="EMOS-ND"/>
</gates>
<devices>
<device name="" package="DPAK">
<connects>
<connect gate="G$1" pin="D" pad="4"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="VND7NV04-1" prefix="Q">
<description>POWER MOSFET N-CH&lt;p&gt;
OMNIFET-II 40V 6A IPAK</description>
<gates>
<gate name="G$1" symbol="EMOS-ND"/>
</gates>
<devices>
<device name="" package="IPAK">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
<device name="-V" package="IPAKV">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="VNS7NV04" prefix="Q">
<description>POWER MOSFET N-CH&lt;p&gt;
OMNIFET-II 40V 6A</description>
<gates>
<gate name="G$1" symbol="EMOS-ND"/>
</gates>
<devices>
<device name="" package="SO08-E3">
<connects>
<connect gate="G$1" pin="D" pad="5-8"/>
<connect gate="G$1" pin="G" pad="4"/>
<connect gate="G$1" pin="S" pad="1-3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="SI7465DP" prefix="Q">
<description>&lt;b&gt;P-Channel MOSFET&lt;/b&gt; 60v</description>
<gates>
<gate name="G$1" symbol="EMOS-PD"/>
</gates>
<devices>
<device name="" package="SO08-E3">
<connects>
<connect gate="G$1" pin="D" pad="5-8"/>
<connect gate="G$1" pin="G" pad="4"/>
<connect gate="G$1" pin="S" pad="1-3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="FDMS7558S" prefix="Q">
<description>N-Channel PowerTrench SyncFET&lt;p&gt;
25 V, 49 A, 1.25 mega-ohm</description>
<gates>
<gate name="G$1" symbol="MFNS-D4S3"/>
</gates>
<devices>
<device name="" package="POWER56">
<connects>
<connect gate="G$1" pin="D1" pad="5"/>
<connect gate="G$1" pin="D2" pad="6"/>
<connect gate="G$1" pin="D3" pad="7"/>
<connect gate="G$1" pin="D4" pad="8"/>
<connect gate="G$1" pin="G" pad="4"/>
<connect gate="G$1" pin="S1" pad="1"/>
<connect gate="G$1" pin="S2" pad="2"/>
<connect gate="G$1" pin="S3" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="FDS6912A" prefix="Q">
<description>Dual N-Channel MOSFET&lt;p&gt;
Logic Level PowerTrench</description>
<gates>
<gate name="A" symbol="EMOS_ND2"/>
<gate name="B" symbol="EMOS_ND2"/>
</gates>
<devices>
<device name="" package="SO08">
<connects>
<connect gate="A" pin="D" pad="5"/>
<connect gate="A" pin="D2" pad="6"/>
<connect gate="A" pin="G" pad="4"/>
<connect gate="A" pin="S" pad="3"/>
<connect gate="B" pin="D" pad="7"/>
<connect gate="B" pin="D2" pad="8"/>
<connect gate="B" pin="G" pad="2"/>
<connect gate="B" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="FDS6675" prefix="Q">
<description>P-Channel MOSFET&lt;p&gt;
Logic Level, PowerTrenchTM</description>
<gates>
<gate name="G$1" symbol="MFPS"/>
</gates>
<devices>
<device name="" package="SO08-E3">
<connects>
<connect gate="G$1" pin="D" pad="5-8"/>
<connect gate="G$1" pin="G" pad="4"/>
<connect gate="G$1" pin="S" pad="1-3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="DMP3130L" prefix="Q">
<description>P-CHANNEL ENHANCEMENT MODE MOSFET</description>
<gates>
<gate name="G$1" symbol="EMOS-PD"/>
</gates>
<devices>
<device name="" package="SOT23">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="FDA69N25" prefix="Q">
<description>N-Channel MOSFET&lt;p&gt;
250V, UniFET</description>
<gates>
<gate name="G$1" symbol="EMOS-ND"/>
</gates>
<devices>
<device name="" package="TO-3PN_V">
<connects>
<connect gate="G$1" pin="D" pad="D"/>
<connect gate="G$1" pin="G" pad="G"/>
<connect gate="G$1" pin="S" pad="S"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="AO6414" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="EMOS-ND"/>
</gates>
<devices>
<device name="" package="TSOP6-4D">
<connects>
<connect gate="G$1" pin="D" pad="D"/>
<connect gate="G$1" pin="G" pad="G"/>
<connect gate="G$1" pin="S" pad="S"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="SI4800BDY" prefix="Q">
<description>&lt;b&gt;N-Channel MOSFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="EMOS-ND"/>
</gates>
<devices>
<device name="" package="SO08-E3">
<connects>
<connect gate="G$1" pin="D" pad="5-8"/>
<connect gate="G$1" pin="G" pad="4"/>
<connect gate="G$1" pin="S" pad="1-3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="FDS6670A" prefix="Q">
<description>&lt;b&gt;N-Channel MOSFET&lt;/b&gt;&lt;p&gt;
30V, 13A, PowerTrench</description>
<gates>
<gate name="G$1" symbol="EMOS-ND"/>
</gates>
<devices>
<device name="" package="SO08-E3">
<connects>
<connect gate="G$1" pin="D" pad="5-8"/>
<connect gate="G$1" pin="G" pad="4"/>
<connect gate="G$1" pin="S" pad="1-3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="HAT1125H" prefix="Q">
<description>&lt;b&gt;P-Channel MOSFET&lt;/b&gt;&lt;p&gt;</description>
<gates>
<gate name="G$1" symbol="EMOS-PD"/>
</gates>
<devices>
<device name="" package="LFPAK-S3">
<connects>
<connect gate="G$1" pin="D" pad="5"/>
<connect gate="G$1" pin="G" pad="4"/>
<connect gate="G$1" pin="S" pad="1-3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="FDS4435BZ" prefix="Q">
<description>P-Channel MOSFET&lt;p&gt;
PowerTrench, -30V, -8.8A, 20 mOhm</description>
<gates>
<gate name="G$1" symbol="EMOS-PD"/>
</gates>
<devices>
<device name="" package="SO08-E3">
<connects>
<connect gate="G$1" pin="D" pad="5-8"/>
<connect gate="G$1" pin="G" pad="4"/>
<connect gate="G$1" pin="S" pad="1-3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="UPA2702GR" prefix="Q">
<description>&lt;b&gt;N-Channel MOSFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="EMOS-ND"/>
</gates>
<devices>
<device name="" package="PSOP8-GR">
<connects>
<connect gate="G$1" pin="D" pad="5-8"/>
<connect gate="G$1" pin="G" pad="4"/>
<connect gate="G$1" pin="S" pad="1-3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BSS214" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="EMOS-ND"/>
</gates>
<devices>
<device name="NW" package="SOT323-R">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
<device name="N" package="SOT23">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="NDS355AN" prefix="Q">
<description>N-Channel Logic Level Enhancement Mode Field Effect Transistor</description>
<gates>
<gate name="G$1" symbol="EMOS-ND"/>
</gates>
<devices>
<device name="" package="SOT23">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="FDC610PZ" prefix="Q">
<description>P-Channel MOSFET&lt;p&gt;
PowerTrench, 30V, 4.9A, 42mOhm</description>
<gates>
<gate name="G$1" symbol="EMOS_PD4"/>
</gates>
<devices>
<device name="" package="SSOT-6">
<connects>
<connect gate="G$1" pin="D1" pad="1"/>
<connect gate="G$1" pin="D2" pad="2"/>
<connect gate="G$1" pin="D3" pad="6"/>
<connect gate="G$1" pin="D4" pad="5"/>
<connect gate="G$1" pin="G" pad="3"/>
<connect gate="G$1" pin="S" pad="4"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BSC340N08NS3" prefix="Q">
<description>&lt;b&gt;N-Channel OptiMOS MOSFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="EMOS-ND"/>
</gates>
<devices>
<device name="" package="PG-TDSON-8(6X5)">
<connects>
<connect gate="G$1" pin="D" pad="5-8"/>
<connect gate="G$1" pin="G" pad="4"/>
<connect gate="G$1" pin="S" pad="1-3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="SI2307CDS" prefix="Q">
<description>&lt;b&gt;P-Channel MOSFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="EMOS-PD"/>
</gates>
<devices>
<device name="" package="SOT23">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="SI2312" prefix="Q">
<description>&lt;b&gt;N-Channel MOSFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="EMOS-ND"/>
</gates>
<devices>
<device name="" package="SOT23">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BSZ058N03MS" prefix="Q">
<description>&lt;b&gt;N-Channel OptiMOS MOSFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="EMOS-ND"/>
</gates>
<devices>
<device name="" package="PG-TDSON-8(3X3)">
<connects>
<connect gate="G$1" pin="D" pad="5-8"/>
<connect gate="G$1" pin="G" pad="4"/>
<connect gate="G$1" pin="S" pad="1-3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BSZ035N03MSG" prefix="Q">
<description>&lt;b&gt;N-Channel OptiMOS MOSFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="EMOS-ND"/>
</gates>
<devices>
<device name="" package="PG-TDSON-8(6X5)">
<connects>
<connect gate="G$1" pin="D" pad="5-8"/>
<connect gate="G$1" pin="G" pad="4"/>
<connect gate="G$1" pin="S" pad="1-3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BSC016N04LS" prefix="Q">
<description>&lt;b&gt;N-Channel OptiMOS MOSFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="EMOS-ND"/>
</gates>
<devices>
<device name="" package="PG-TDSON-8(6X5)">
<connects>
<connect gate="G$1" pin="D" pad="5-8"/>
<connect gate="G$1" pin="G" pad="4"/>
<connect gate="G$1" pin="S" pad="1-3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="SI2333DS" prefix="Q">
<description>&lt;b&gt;P-Channel MOSFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="EMOS-PD"/>
</gates>
<devices>
<device name="" package="SOT23">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="PMN20EN" prefix="Q">
<description>&lt;b&gt;Dual N-Channel MOSFET&lt;/b&gt;&lt;p&gt;
30 V, 6.7 A N-channel Trench MOSFET</description>
<gates>
<gate name="G$1" symbol="EMOS_ND4"/>
</gates>
<devices>
<device name="" package="SOT457">
<connects>
<connect gate="G$1" pin="D1" pad="1"/>
<connect gate="G$1" pin="D2" pad="2"/>
<connect gate="G$1" pin="D3" pad="5"/>
<connect gate="G$1" pin="D4" pad="6"/>
<connect gate="G$1" pin="G" pad="3"/>
<connect gate="G$1" pin="S" pad="4"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="SI2319CDS" prefix="Q">
<description>&lt;b&gt;P-Channel MOSFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="EMOS-PD"/>
</gates>
<devices>
<device name="" package="SOT23">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="ZVP4105A" prefix="Q">
<description>&lt;b&gt;P-Channel Enhancement DMOS FET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="EMOS-PD"/>
</gates>
<devices>
<device name="" package="E3LINE">
<connects>
<connect gate="G$1" pin="D" pad="1"/>
<connect gate="G$1" pin="G" pad="2"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="IRL530" prefix="Q">
<description>MOSFET&lt;p&gt;
17A 22.7nC 100mOhm Logic Level</description>
<gates>
<gate name="G$1" symbol="MFNS"/>
</gates>
<devices>
<device name="N-V" package="TO220V">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
<device name="N-H" package="TO220">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
<device name="S" package="D2PAK">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BSS138W" prefix="Q">
<description>&lt;b&gt;N-Channel MOSFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="EMOS-ND"/>
</gates>
<devices>
<device name="" package="SOT323-R">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="SI2302" prefix="Q">
<description>MOSFET N-Channel 20 V (D-S)</description>
<gates>
<gate name="G$1" symbol="EMOS-ND"/>
</gates>
<devices>
<device name="" package="SOT23">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="IRFL9110" prefix="Q">
<description>&lt;b&gt;P-Channel MOSFET&lt;/b&gt;&lt;p&gt;
100V 1.1A</description>
<gates>
<gate name="G$1" symbol="EMOS-PD"/>
</gates>
<devices>
<device name="" package="SOT223">
<connects>
<connect gate="G$1" pin="D" pad="2 4"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="MMBFJ108" prefix="Q">
<description>&lt;b&gt;N-Channel JFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="JFET-N"/>
</gates>
<devices>
<device name="" package="SOT23">
<connects>
<connect gate="G$1" pin="D" pad="1"/>
<connect gate="G$1" pin="G" pad="3"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="PMBFJ174" prefix="Q">
<description>&lt;b&gt;P-Channel Switch FET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="JFET-P"/>
</gates>
<devices>
<device name="" package="SOT23">
<connects>
<connect gate="G$1" pin="D" pad="1"/>
<connect gate="G$1" pin="G" pad="3"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="NDP6060" prefix="Q">
<description>N-Channel  Enhancement Mode Field Effect Transistor</description>
<gates>
<gate name="G$1" symbol="EMOS-ND"/>
</gates>
<devices>
<device name="" package="TO220V">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="NDB6060" prefix="Q">
<description>N-Channel  Enhancement Mode Field Effect Transistor</description>
<gates>
<gate name="G$1" symbol="EMOS-ND"/>
</gates>
<devices>
<device name="" package="D2PAK">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="J105" prefix="Q">
<description>N-Channel FET Switch</description>
<gates>
<gate name="G$1" symbol="JFET-N"/>
</gates>
<devices>
<device name="" package="TO92">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="SI2323DS" prefix="Q">
<description>&lt;b&gt;P-Channel MOSFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="EMOS-PD"/>
</gates>
<devices>
<device name="" package="SOT23">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="DMC2400UV" prefix="Q">
<description>DUAL N/P CHANNEL FET</description>
<gates>
<gate name="A" symbol="EMOS-ND"/>
<gate name="B" symbol="EMOS-PD"/>
</gates>
<devices>
<device name="" package="SOT563">
<connects>
<connect gate="A" pin="D" pad="6"/>
<connect gate="A" pin="G" pad="2"/>
<connect gate="A" pin="S" pad="1"/>
<connect gate="B" pin="D" pad="3"/>
<connect gate="B" pin="G" pad="5"/>
<connect gate="B" pin="S" pad="4"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="FQD10N20L" prefix="Q">
<description>&lt;b&gt;N-CHANNEL QFET MOSFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="EMOS-ND"/>
</gates>
<devices>
<device name="" package="DPAK">
<connects>
<connect gate="G$1" pin="D" pad="4"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="PSMN6R3-120PS" prefix="Q">
<description>&lt;b&gt;N-Channel MOSFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="EMOS-ND"/>
</gates>
<devices>
<device name="_V" package="TO220V">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
<device name="" package="TO220">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="SI1869DH" prefix="Q">
<description>LOAD SWITCH WITH LEVEL SHIFTER&lt;p&gt;
N-FET AND P-FET</description>
<gates>
<gate name="G$1" symbol="SI1869DH"/>
</gates>
<devices>
<device name="" package="SC70-6L">
<connects>
<connect gate="G$1" pin="1" pad="1"/>
<connect gate="G$1" pin="2-3" pad="2 3"/>
<connect gate="G$1" pin="4" pad="4"/>
<connect gate="G$1" pin="5" pad="5"/>
<connect gate="G$1" pin="6" pad="6"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="ZVP4424Z" prefix="Q">
<description>&lt;b&gt;P-Channel Enhancement DMOS FET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="EMOS-PD"/>
</gates>
<devices>
<device name="" package="SOT89">
<connects>
<connect gate="G$1" pin="D" pad="2 2@TAB"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="CSD17306Q5A" prefix="Q">
<description>&lt;b&gt;N-Channel Power MOSFET&lt;/b&gt;&lt;p&gt;
30V, N-Channel NexFET</description>
<gates>
<gate name="G$1" symbol="EMOS-ND"/>
</gates>
<devices>
<device name="" package="SON8-Q5A">
<connects>
<connect gate="G$1" pin="D" pad="5 6 7 8"/>
<connect gate="G$1" pin="G" pad="4"/>
<connect gate="G$1" pin="S" pad="1 2 3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="PSMN4R0-40YS" prefix="Q">
<description>&lt;b&gt;N-Channel MOSFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="EMOS-ND"/>
</gates>
<devices>
<device name="" package="LFPAK">
<connects>
<connect gate="G$1" pin="D" pad="5"/>
<connect gate="G$1" pin="G" pad="4"/>
<connect gate="G$1" pin="S" pad="1 2 3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="CSD17308Q3" prefix="Q">
<description>&lt;b&gt;N-Channel MOSFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="EMOS-ND"/>
</gates>
<devices>
<device name="" package="SON8-Q3">
<connects>
<connect gate="G$1" pin="D" pad="5 6 7 8"/>
<connect gate="G$1" pin="G" pad="4"/>
<connect gate="G$1" pin="S" pad="1 2 3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="IRL520" prefix="Q">
<description>MOSFET N-CH 100V 10A D2PAK</description>
<gates>
<gate name="G$1" symbol="MFNS"/>
</gates>
<devices>
<device name="" package="D2PAK">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="IRFR5505" prefix="Q">
<description>&lt;b&gt;P-Channel FET&lt;/b&gt;&lt;p&gt;
MOSFET P-CH 55V 18A DPAK</description>
<gates>
<gate name="G$1" symbol="MFPS"/>
</gates>
<devices>
<device name="" package="DPAK">
<connects>
<connect gate="G$1" pin="D" pad="4"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="FQP27P06" prefix="Q">
<description>&lt;b&gt;P-Channel MOSFET&lt;/b&gt;&lt;p&gt;
- 60V, - 27A, 70 mOhm</description>
<gates>
<gate name="G$1" symbol="EMOS-PD"/>
</gates>
<devices>
<device name="" package="TO220V">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
<device name="_H" package="TO220">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="DMP2004K" prefix="Q">
<description>&lt;b&gt;P-Channel Enhancement MOSFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="EMOS-PD"/>
</gates>
<devices>
<device name="" package="SOT23">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="DMN2004K" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="EMOS-ND"/>
</gates>
<devices>
<device name="" package="SOT23">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="J201" prefix="Q">
<description>&lt;b&gt;N-Channel FET&lt;/b&gt;&lt;p&gt;</description>
<gates>
<gate name="G$1" symbol="JFET-N"/>
</gates>
<devices>
<device name="" package="TO92">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="RZM001P02" prefix="Q">
<description>&lt;b&gt;P-Channel MOSFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="EMOS-PD"/>
</gates>
<devices>
<device name="" package="SOT723">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="DMP2305U" prefix="Q">
<description>&lt;b&gt;P-Channel Enhancement MOSFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="EMOS-PD"/>
</gates>
<devices>
<device name="" package="SOT23">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="AO3401A" prefix="Q">
<description>&lt;b&gt;P-Channel Enhancement MOSFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="EMOS-PD"/>
</gates>
<devices>
<device name="" package="SOT23">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="SI7997DP" prefix="Q">
<description>Dual P-Channel 30 V (D-S) MOSFET</description>
<gates>
<gate name="A" symbol="EMOS-PD"/>
<gate name="B" symbol="EMOS-PD"/>
</gates>
<devices>
<device name="" package="POWERPAK-SO-08D">
<connects>
<connect gate="A" pin="D" pad="7 8"/>
<connect gate="A" pin="G" pad="2"/>
<connect gate="A" pin="S" pad="1"/>
<connect gate="B" pin="D" pad="5 6"/>
<connect gate="B" pin="G" pad="4"/>
<connect gate="B" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="SI7601DN" prefix="Q">
<description>&lt;b&gt;P-Channel MOSFET&lt;/b&gt; 60v</description>
<gates>
<gate name="G$1" symbol="EMOS-PD"/>
</gates>
<devices>
<device name="" package="POWERPAK-1212-8">
<connects>
<connect gate="G$1" pin="D" pad="5-8"/>
<connect gate="G$1" pin="G" pad="4"/>
<connect gate="G$1" pin="S" pad="1 2 3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="SI7905DN" prefix="Q">
<description>Dual P-Channel MOSFET</description>
<gates>
<gate name="A" symbol="EMOS-PD"/>
<gate name="B" symbol="EMOS-PD"/>
</gates>
<devices>
<device name="" package="POWERPAK-1212-8D">
<connects>
<connect gate="A" pin="D" pad="7 8"/>
<connect gate="A" pin="G" pad="2"/>
<connect gate="A" pin="S" pad="1"/>
<connect gate="B" pin="D" pad="5 6"/>
<connect gate="B" pin="G" pad="4"/>
<connect gate="B" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
</devicesets>
</library>
</drawing>
</eagle>
